SPECIFICATIONS
Part Number: DS200TCDAF1ACD
Manufacturer: General Electric
Series: Mark V
Product type: Software EPROM Set
Availability: In Stock
Country of Manufacture: United States (USA)
Functional Description
DS200TCDAF1ACD is a Software EPROM Set designed and developed by GE. It is a part of the Mark V control system. EPROM (Erasable Programmable Read-Only Memory) represents a crucial category of Read-Only Memory (ROM), notable for its unique characteristics in reading and writing data optically. Understanding its functionality and construction sheds light on its significance in digital memory storage.
Features
- EPROM facilitates both reading and writing data optically, but with distinct operational principles. To write data onto an EPROM, its storage cells must maintain a specific initial state. This prerequisite ensures the successful programming or recording of new data into the EPROM's memory cells. Each cell's state alteration is accomplished by modifying the electrical charge trapped within the cell, a process integral to EPROM's functionality.
- One notable aspect is that EPROM exhibits reduced storage permanency compared to PROM (Programmable Read-Only Memory). This reduced permanency arises from EPROM's susceptibility to external factors such as radiation and electrical noise. These influences can interfere with the integrity of stored data, potentially altering or corrupting information within the EPROM's memory cells.
- In the construction of EPROM chips, Metal-Oxide-Semiconductor (MOS) transistors play a pivotal role. Specifically, EPROMs incorporate a unique type of MOS transistor known as the Floating Gate Avalanche Injection MOS transistor. This specialized transistor design includes two gates, one of which is a "floating gate" without direct electrical connection to the rest of the circuitry. This floating gate is the key element responsible for storing charge and altering the state of the memory cell during programming and erasure cycles.
- During the programming process, electrical charges are trapped in the floating gate by applying high voltages, altering the cell's state to represent the desired data. However, during the erasure phase, UV light exposure is employed to remove these trapped charges, effectively resetting the cell's state for reprogramming.
- Despite its reduced storage permanency compared to PROM and susceptibility to external influences, EPROM remains a valuable component in digital circuitry due to its capability for reprogramming and erasure. Its construction utilizing MOS transistors, albeit sensitive to certain factors, facilitates its adaptability and reusability in various applications where non-volatile memory with reprogrammable capabilities is required.
System Environmental Requirements
- Ambient Temperature (0 to 45 oC): This specifies the acceptable range of temperature within which the system should operate optimally. Operating within this temperature range ensures that the system components function effectively without overheating or cold-related issues.
- Relative Humidity (5 to 95% non-condensing): The specified relative humidity range denotes the acceptable moisture levels in the environment where the system operates. Maintaining humidity within this range prevents moisture-related issues like condensation that could potentially damage sensitive components.
- Seismic Capability (Designed to UBC Seismic Code - Zone 4): This indicates the system's ability to withstand seismic activities as per the Universal Building Code (UBC) Seismic Code in Zone 4, ensuring that the system remains stable and operational during seismic events.
- Vibration (1.0 G horizontal, 0.5 G vertical at 15 to 120 Hz): The system is designed to tolerate specific levels of vibrations in both horizontal and vertical directions within the given frequency range. This ensures the system's stability and functionality even when subjected to vibrations.
- Surge (Designed to ANSI C37.90.1): Compliance with ANSI C37.90.1 ensures that the system can handle electrical surges effectively, protecting it from potential damages caused by sudden increases in voltage.
- Radio Interference (5 W radio transmitter at various frequencies): This indicates the system's immunity to radio interference caused by specific radio transmitters operating at 27 MHz, 150 MHz, and 480 MHz. The system can continue to function without disruption despite radio transmissions at these frequencies.
- Altitude (2000 m maximum): Specifies the maximum altitude at which the system can reliably operate. Higher altitudes might affect air pressure and, consequently, the system's performance; however, this system is designed to function effectively within the specified altitude limit.
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FREQUENTLY ASKED QUESTIONS
What is DS200TCDAF1ACD?
It is a Software EPROM Set designed and developed by GE
Why is maintaining relative humidity between 5 to 95% crucial?
This range indicates the acceptable moisture levels in the environment where the system operates. Keeping humidity within these bounds prevents potential moisture-related problems like condensation that could harm sensitive system components.
How does seismic capability affect the system's performance?
Designed to adhere to the Universal Building Code (UBC) Seismic Code in Zone 4, the system demonstrates its ability to withstand seismic activities, ensuring stability and uninterrupted operation during seismic events.
How does the system handle vibrations within the specified range?
The system is engineered to endure specific levels of vibrations in both horizontal and vertical directions, falling within the defined frequency range. This design ensures system stability and functionality even when subjected to vibrations.
What significance does compliance with ANSI C37.90.1 hold?
Compliance with this standard ensures the system's capability to effectively manage electrical surges, safeguarding against potential damages caused by sudden increases in voltage.
